Click to expand full text
DATA SHEET www.onsemi.com
MOSFET – N-Channel, DUAL COOL ), POWERTRENCH)
120 V, 128 A, 4.2 mW
FDMT800120DC
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance.
Features
• Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 20 A • Max rDS(on) = 6.
FDMT800120DC Datasheet
