FDMT800120DC
Description
This N-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process.
Key Features
- Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 20 A
- Max rDS(on) = 6.4 mW at VGS = 6 V, ID = 16 A
- Advanced Package and Silicon bination for Low rDS(on) and High Efficiency
- Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
- Low Profile 8 x 8 mm MLP Package
- MSL1 Robust Package Design
- 100% UIL Tested
- This Device is RoHS pliant
